 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BCP 54, BCP 55, BCP 56 NPN General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 1.65 4 0.2 0.3 6.5 0.1 3 0.2 1.3 W SOT-223 0.04 g Plastic case Kunststoffgehause 3.5 Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1 0.7 2.3 2 3 3.25 Dimensions / Mae in mm 1 = B 2, 4 = C 3 = E Maximum ratings (TA = 25/C) BCP 54 Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (DC) Peak Collector current - Koll.-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temp. - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM IBM Tj TS 45 V 45 V 7 Grenzwerte (TA = 25/C) BCP 55 60 V 60 V 5V 1.3 W 1) 1A 1.5 A 200 mA 150/C - 65...+ 150/C BCP 56 80 V 100 V Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 30 V IE = 0, VCB = 30 V, Tj = 125/C Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 5 V IC = 500 mA, IB = 50 mA IEB0 VCEsat - - ICB0 ICB0 - - Kennwerte (Tj = 25/C) Typ. - - - - Max. 100 nA 10 :A 100 nA 500 mV Collector saturation volt. - Kollektor-Sattigungsspg. 2) 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 26 01.11.2003 General Purpose Transistors Characteristics (Tj = 25/C) BCP 54, BCP 55, BCP 56 Kennwerte (Tj = 25/C) Min. Typ. - - - - - - 130 MHz - Max. 100 160 250 - - 1V - 1.6 DC current gain - Kollektor-Basis-Stromverhaltnis 1) BCP 5x-6 VCE = 2 V, IC = 150 mA VCE = 2 V, IC = 5 mA VCE = 2 V, IC = 500 mA VCE = 2 V, IC = 500 mA Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz DC current gain ratio of the complement. pairs Verhaltnis der Stromverst. complement. Paare Thermal resistance - Warmewiderstand junction to ambient air - Sperrschicht zu umgebender Luft junction to soldering point - Sperrschicht zu Lotpad Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren RthA RthS 95 K/W 2) 14 K/W fT hFE1'hFE2 - - BCP 5x-10 BCP 5x-16 hFE hFE hFE 40 63 100 63 40 - hFE BCP 54... BCP56 hFE VBEon Base-Emitter voltage - Basis-Emitter-Spannung 1) BCP 51, BCP 52, BCP 53 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 27 |
Price & Availability of BCP56
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |